Thermal stability and decomposition kinetics of amorphous hydrogenated films

Nitrogen modification of hydrogenated amorphous carbon films

The effect of nitrogen addition on the structural and electronic properties of hydrogenated amorphous carbon ~a-C:H! films has been characterized in terms of its composition, sp bonding fraction, infrared and Raman spectra, optical band gap, conductivity, and paramagnetic defect. The variation of conductivity with nitrogen content suggests that N acts as a weak donor, with the conductivity firs...

Thermal expansion coefficient of hydrogenated amorphous carbon

The coefficient of thermal expansion ~CTE! of hydrogenated amorphous carbon (a-C:H) was investigated as a function of the concentration of sp hybridization. The CTE, determined using the thermally induced bending technique, depends on the concentration of sp bonded carbon, increasing to the value of graphite as the sp concentration approaches 100%. By using a combination of the thermally induce...

Thermal stability of amorphous Zn-In-Sn-O films

Isochronal annealing of amorphous Zn and Sn codoped In2O3 (a-ZITO) films was performed at the Synchrotron so that to extract, in situ, important kinetic nucleation and growth parameters from a single constant-rate heating experiment. First, amorphous Zn and Sn codoped In2O3 films were deposited via pulsed laser deposition and subjected to postdeposition annealing treatments to study their stabi...

Fabrication of the Hydrogenated Amorphous Silicon Films Exhibiting High Stability Against Light Soaking

Incorporation of sulfur into hydrogenated amorphous carbon films

Amorphous hydrogenated carbon–sulfur thin films (a-C:H:S) were deposited from CH yH S gas mixtures by capacitively4 2 coupled radio-frequency PECVD. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) were used to probe the composition of the films. XPS showed that the sulfur atomic percentage within a film was proportional to the fraction of H S in the H SyCH gas ...